Department of Chemical Engineering

srinivar

Dr. Ramanathan S


 

Professor

MSB239

srinivar@iitm.ac.in

+91 44 22574171

Personal Website

Research Areas


Electrochemistry, chemical mechanical planarization for semiconductor processing


Publication

70 entries « 9 of 10 »

2008

Manivannan, R; Ramanathan, S: Role of abrasives in high selectivity STI CMP slurries. Microelectronic Engineering, 85 (8), pp. 1748-1753, 2008, ISSN: 01679317. (Type: Journal Article | Links | BibTeX)

2007

Prasad, Y N; Ramanathan, S: Chemical mechanical planarization of copper in alkaline slurry with uric acid as inhibitor. Electrochimica Acta, 52 (22), pp. 6353-6358, 2007, ISSN: 00134686, (cited By 61). (Type: Journal Article | Links | BibTeX)
Prasad, Y Nagendra; Ramanathan, S: Insitu characterization of Cu CMP with peroxide based slurries containing arginine as complexing agent. VDE Verlag GmbH, 2007, ISBN: 9783800730650. (Type: Conference | Links | BibTeX)

2006

Moganty, S S; S., Ramanathan: The role of arginine as a complexing agent in copper CMP. 914 , 2006. (Type: Conference | Links | BibTeX)
Prasad, Y Nagendra; Ramanathan, S: Role of amino-acid adsorption on silica and silicon nitride surfaces during STI CMP. Electrochemical and Solid-State Letters, 9 (12), pp. 337-339, 2006, ISSN: 10990062. (Type: Journal Article | Links | BibTeX)
Sekhar, M S; Ramanathan, S: Characterization of copper chemical mechanical polishing (CMP) in nitric acid-hydrazine based slurry for microelectronic fabrication. Thin Solid Films, 504 (1-2), pp. 227-230, 2006, ISSN: 00406090. (Type: Journal Article | Links | BibTeX)
Prasad, Y Nagendra; Ramanathan, S: Role of amino-acid adsorption on silica and silicon nitride surfaces during STI CMP. Electrochemical and Solid-State Letters, 9 (12), pp. 337-339, 2006. (Type: Journal Article | Links | BibTeX)
70 entries « 9 of 10 »